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| PD - 9.1023 IRGPC30F INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) 2.1V @VGE = 15V, IC = 17A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO -2 4 7 AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 31 17 120 120 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 1.2 -- 40 -- Units C/W g (oz) IRGPC30F Electrical Characteristics @ T J = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES IGES Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, IC = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.69 -- V/C VGE = 0V, IC = 1.0mA -- 1.8 2.1 IC = 17A VGE = 15V -- 2.4 -- V IC = 31A See Fig. 2, 5 -- 2.2 -- IC = 17A, TJ = 150C Gate Threshold Voltage 3.0 -- 5.5 VCE = VGE, I C = 250A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, I C = 250A Forward Transconductance 6.1 10 -- S VCE = 100V, IC = 17A Zero Gate Voltage Collector Current -- -- 250 A V GE = 0V, VCE = 600V -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 27 30 IC = 17A 4.1 5.9 nC VCC = 400V See Fig. 8 12 15 VGE = 15V 25 -- TJ = 25C 21 -- ns IC = 17A, VCC = 480V 210 320 VGE = 15V, RG = 23 300 500 Energy losses include "tail" 0.30 -- 2.1 -- mJ See Fig. 9, 10, 11, 14 2.4 3.5 25 -- TJ = 150C, 21 -- ns IC = 17A, VCC = 480V 290 -- VGE = 15V, RG = 23 590 -- Energy losses include "tail" 3.6 -- mJ See Fig. 10, 14 7.5 -- nH Measured 5mm from package 670 -- VGE = 0V 100 -- pF VCC = 30V See Fig. 7 10 -- = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 5.0s, single shot. VCC=80%(VCES), VGE=20V, L=10H, RG= 23, ( See fig. 13a ) Pulse width 80s; duty factor 0.1%. IRGPC30F 40 For both: Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 24W Triangular wave: LOAD CURRENT (A) 30 Clamp voltage: 80% of rated Square wave: 20 60% of rated voltage 10 Ideal diodes 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK ) 1000 1000 I C, Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) TJ = 25C 100 100 TJ = 150C 10 TJ = 150C 10 TJ = 25C 1 1 1 VGE = 15V 20s PULSE WIDTH 10 0.1 5 10 VCC = 100V 5s PULSE WIDTH 15 20 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRGPC30F 40 VGE = 15V 3.5 VGE = 15V 80s PULSE WIDTH IC = 34A VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 3.0 30 2.5 20 I C = 17A 2.0 10 1.5 I C = 8.5A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (C) TC , Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 Notes: 1. Duty fact or D = t 1 /t 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case IRGPC30F 1400 20 1200 VGE , Gate-to-Emitter Voltage (V) V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc Coes = Cce + C gc VCE = 400V I C = 17A 16 C, Capacitance (pF) 1000 Cies 800 12 Coes 600 8 400 Cres 200 4 0 1 10 100 0 0 5 10 15 20 25 30 V CE , Collector-to-Emitter Voltage (V) Q g , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.7 Total Switching Losses (mJ) 2.6 Total Switching Losses (mJ) VCC VGE TC IC = 480V = 15V = 25C = 17A 10 I C = 34A 2.5 I C = 17A 2.4 I C = 8.5A 2.3 2.2 0 10 20 30 40 50 60 1 -60 -40 -20 RG = 23 VGE = 15V VCC = 480V 0 20 40 60 80 100 120 140 160 R G , Gate Resistance ( ) W TC, Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature IRGPC30F 10 8 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 23 T C = 150C VCC = 480V VGE = 15V 1000 VGE = 20V GE TJ = 125C 100 SAFE OPERATING AREA 6 10 4 2 0 10 20 30 40 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 15.90 ( .626) 15.30 ( .602) -B- 3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) -D- 5.30 ( .209) 4.70 ( .185) 2.50 (.089) 1.50 (.059) 4 NO TES: 1 DIMENSIO NS & T OLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIO NS ARE SHOW N MILLIMETE RS (INCHES). 4 CONFO RM S TO JEDEC OUTLINE T O-247AC. 20.30 (.800) 19.70 (.775) 1 2X 5.50 (.217) 4.50 (.177) 2 3 -C- LEAD ASSIGNMENT S 1 - GAT E 2 - CO LLECTO R 3 - EMIT TER 4 - CO LLECTO R * 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 4.30 (.170) 3.70 (.145) 1.40 (.056) 3X 1.00 (.039) 0.25 ( .010) M 3.40 (.133) 3.00 (.118) 0.80 ( .031) 3X 0.40 ( .016) 2.60 (.102) 2.20 (.087) * LO NGE R LEADED (20m m) VERS ION AVAILAB LE (TO-247AD) TO ORDE R ADD "-E " SUFF IX TO PART NUMBER 5.45 (.215) 2X CA S CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) IRGPC30F L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X IC@25C 480F 960V Q R * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V Q 1000V R S Q R 90% S VC 90% 10% Fig. 14b - Switching Loss Waveforms t d(off) 10% I C 5% t d(on) tr Eon Ets = (Eon +Eoff ) tf t=5s Eoff This datasheet has been download from: www..com Datasheets for electronics components. |
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